Sumitomo Electric to Feature High Output Power S-band and X-band GaN Products for Radar Applications at IMS 2018

Sumitomo Electric Industries, Ltd and its group company Sumitomo Electric Device Innovations USA, Inc. (SEDU) will participate in the 2018 International Microwave Symposium (IMS 2018) held in Philadelphia, USA. SEDU is a leading provider of advanced RF(radiofrequency), wireless and optical communications solutions. Its latest offerings include S-band and X-band GaN HEMTs (galliumnitride high-electron-mobility transistors) targeted for radar applications at 3.1-3.5 GHz and 9.0-10 GHz respectively.

Today's radars provide large detection areas and advanced early detection, while reducing their size and weight. GaN is a proven and reliable semiconductor material used for radar applications. Having high power output and wide bandwidth, GaN is expected to improve the performance of radars. Sumitomo Electric will showcase new GaN-HEMT products, SGN3135-500H-R and SGC0910-300A-R, at the preeminent conference.

Features of SGN3135-500H-R for the S-band
  • High output power: Psat = 570 W (Typ.)
  • High gain: GP = 11.6 dB (Typ.)
  • High power added efficiency: 58% (Typ.)
  • Frequency band: 3.1 to 3.5 GHz
  • Impedance matched Zin/Zout = 50 ohm
  • Hermetically sealed IV package
Features of SGC0910-300A-R for the X-band
  • High output Power: Psat = 340 W (Typ.)
  • High gain: GP = 9.3 dB (Typ.)
  • High power added efficiency: 35% (Typ.)
  • Frequency band: 9.0 to 10.0 GHz
  • Impedance matched Zin/Zout = 50 ohm
  • Hermetically sealed package

SGN3135-500H-R and SGC0910-300A-R were designed by drawing on Sumitomo Electric's established GaN process technology. Sumitomo Electric remains the leader in producing GaN-related products and continues to lead in technological innovation to offer low-cost high-performance devices for next-generation radar systems.