GaN Semiconductors are Enabling New X-band Radars

Sumitomo Electric Device Innovations, a leading provider of RF & Microwave devices, introduce their line of high-power GaN products for X-Band radar applications. Next generation X-Band radars face significant size, weight, power, and cost (SWAP-C) challenges. Among the challenges are the RF power amplifier designs used in these radar systems. Sumitomo Electric has developed a line of high power GaN X-Band devices that enable RF solid-state power amplifiers to meet the SWAP-C challenges of these new radars while also improving reliability versus tube amplifiers. GaN provides very high power and bandwidth that improves performance and is a proven and reliable technology for radar applications.

Sumitomo Electric remains the leader in GaN and continues to lead in innovation and technology to help customers with lower costs and improved performance for next generation radar systems.

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